Piezoelectric element and manufacturing method and manufacturing device thereof
US6494567B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 21, 2001 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Mar 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/8554
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
By setting the thickness of the Ti core between 4˜6 nm and adjusting the thickness ratio of the Pt layer in relation to the thickness of the entire lower electrode, the (100) face orientation degree of a piezoelectric thin film may be set to a prescribed ratio with favorable reproducibility. Preferably, the (100) face orientation degree of the piezoelectric thin film is not less than 40% and not more than 70% or less, the (110) face orientation degree is 10% or less, and the (111) face orientation degree is the remaining portion thereof. Further, by applying heat from the lower electrode side upon calcinating the piezoelectric precursor film, it is possible to obtain satisfactory crystallinity as the crystal growth begins from the lower electrode side and reaches the upper part of the film. Accordingly, piezoelectric properties of the piezoelectric thin film are improved, and a highly reliable inkjet recording head and printer may be obtained thereby.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.