Multi-layered thin-film functional device and magnetoresistance effect element
US6495275B2 · kind B2 · utility
41Cited by
1References
9Claims
0Family size
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Key dates
| Filing date | Aug 13, 2001 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Aug 13, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element includes a free layer, a pinned layer and a non-magnetic intermediate layer interposed between the free layer and the pinned layer. Additionally, a metal barrier layer is provided adjacent to the first magnetic layer. An electron reflecting layer located adjacent to the metal barrier layer contains at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.