MOS transistor having aluminum nitride gate structure and method of manufacturing same
US6495409B1 · kind B1 · utility
28Cited by
10References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1999 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Dec 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An MOS transistor comprising a substrate, a source, a drain, and a gate, wherein the gate comprises aluminum nitride. Aluminum nitride is epitaxially grown on the silicon substrate at a substrate temperature of about 600° C. and subsequently annealed at a substrate temperature of about 950° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.