Method for forming a nitridized interface on a semiconductor substrate
US6495477B2 · kind B2 · utility
3Cited by
12References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2001 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | May 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A surface treatment method for forming a fluorine-doped nitridized interface on a semiconductor substrate. The fluorine-doped nitridized interface may be formed using an ammonia plasma CVD process having a treatment gas doped with a fluorine component, such as carbon hexafluorine. The method may be employed as part of a LOCOS-based processing scheme in the manufacture of MOS semiconductor devices, such as DRAM devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.