Patent · US Expired

Opto-electronic component made from II-VI semiconductor material

US6495859B2 · kind B2 · utility

1Cited by

6References

4Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Frank Fischer · Pfaffen-Schwabenheim, DE
Hans-Jürgen Lugauer · Sinzing, DE
Thomas Litz · Würzburg, DE
Gottfried Landwehr · Würzburg, DE
Andreas Waag · Würzburg, DE

Key dates

Filing date	Jun 7, 2001
Grant date	Dec 17, 2002
Priority date	—
Expiry date	Jun 7, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/3216
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A component has an active layer, barrier layers and, if appropriate, a buffer layer and at least one of these layers contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTe/ZnSe or of BeTe/ZnCdSe. When using an active layer of ZnSe on a substrate of GaAs, matching with low electrical resistance is achieved between the III-V materials and the II-VI materials by means of a pseudo-graded buffer layer including a beryllium-containing chalcogenide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.