Method for designing mask pattern of a self scanning light emitting device
US6496973B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2001 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Jul 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A method of designing an optimum mask pattern for forming a metal line by an etching process, the metal line also effectively serving as a light-shielding layer, is provided. In this method, assuming that a mask pattern for forming a first metal line on a transparent insulating film has a width of “L1” overlapped with a first control electrode in a direction perpendicular to an array direction of of transfer elements, “L1” is selected so as to satisfy the following relation L1>(S+dS)+a, wherein “S” is the distance of side etching of the first metal line, “dS” is the dispersion of the distance of the side etching, and “a” is the misalignment of the mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.