Method for growing SiC single crystals

US6497764B2 · kind B2 · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Harald Kuhn · Frammersbach, DE
• Rene Stein · Simmerath, DE
• Johannes Volkl · Erlangen, DE

Key dates

• Filing date: Jan 16, 2001
• Grant date: Dec 24, 2002
• Expiry date: Jan 16, 2021

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/36
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method is described for growing at least one silicon carbide (SiC) single crystal by sublimation of a SiC source material. Silicon, carbon and a SiC seed crystal are introduced into a growing chamber. Then, the SiC source material is produced from the silicon and the carbon in a synthesis step that takes place before the actual growing. The growing of the SiC single crystal is then carried out immediately after the synthesis step. The carbon used is a C powder with a mean grain diameter of greater than 10 &mgr;m.