Capacitor having perovskite series dielectric film containing copper and manufacturing method thereof
US6498044B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 30, 2000 |
| Grant date | Dec 24, 2002 |
| Priority date | — |
| Expiry date | Oct 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor having a perovskite series dielectric film, and manufacturing method thereof are provided. The perovskite series dielectric film capacitor is characterized in that the perovskite series dielectric film contains copper. The method of manufacturing the perovskite series dielectric film which contains copper includes forming the perovskite series dielectric film on a lower electrode, forming a CuXO film on the perovskite series dielectric film, and permitting CuXO or copper of the CuXO film to penetrate the perovskite series dielectric film preferably by a heat treatment. In the perovskite series dielectric film capacitor, CuXO or copper penetrates the grain boundary of the perovskite series dielectric film having a columnar crystal structure, thereby improving a leakage current characteristic of the perovskite series dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.