Interface control for film deposition by gas-cluster ion-beam processing
US6498107B1 · kind B1 · utility
26Cited by
14References
31Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 1, 2000 |
| Grant date | Dec 24, 2002 |
| Priority date | — |
| Expiry date | May 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are disclosed for gas-cluster ion-beam deposition of thin films on silicon wafers rendered free of native oxides by termination of the surface bonds and subsequent reactive deposition. Hydrogen termination of the surface of silicon renders it inert to reoxidation from oxygen-containing environmental gasses, even those found as residue in vacuum systems, such as those used to deposit films. Nitrogen termination improves the interface with overlying metal-oxide thin films. The film is formed in intimate contact with the silicon crystal surface forming a nearly ideal interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.