Single charge carrier transistor, method of holding a charge carrier within a quantum dot, and method of detection
US6498354B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2000 |
| Grant date | Dec 24, 2002 |
| Priority date | — |
| Expiry date | Dec 13, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/937
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A single electron on hole field effect transistor fabricated from a narrow band gap semiconductor. The transistor is such that the valence and conduction bands have sufficiently similar energy levels such that a top region of the valence band at one point (37), e.g. under a gate electrode (34), within the current path of the transistor can be forced to be higher than the bottom region of the conduction band at another point within the transistor, allowing Zener tunelling to occur. The transistor is fabricated from semiconductors with band gaps narrow enough to allow this to occur, for instance InSb and InAISb, CdTe and CDxHg1−xTe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.