Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
US6498358B1 · kind B1 · utility
181Cited by
80References
14Claims
0Family size
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Key dates
| Filing date | Jul 20, 2001 |
| Grant date | Dec 24, 2002 |
| Priority date | — |
| Expiry date | Jul 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/08
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure for implementing optical beam switching includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. An optical source component that is operable to transmit radiant energy is formed within the monocrystalline compound semiconductor layer. A diffraction grating including an electrochromic portion is optically coupled to the optical source component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.