Deep reactive ion etching process and microelectromechanical devices formed thereby
US6500348B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2001 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Apr 2, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0132
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A process for forming a microelectromechanical system (MEMS) device by a deep reactive ion etching (DRIE) process during which a substrate overlying a cavity is etched to form trenches that breach the cavity to delineate suspended structures. In order to eliminate or at least reduce heat and/or charge accumulation that accelerates the DRIE etch rate of certain suspended structures, means are provided to electrically and/or thermally tie the suspended structures to each other and/or the surrounding bulk substrate. As a result, the process window is increased to allow slower-etching structures to be etched to completion without overetching the more rapidly-etched structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.