Methods and apparatus for depositing magnetic films
US6500676B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 20, 2001 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Aug 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and systems are provided for depositing a magnetic film using one or more long throw magnetrons, and in some embodiments, an ion assist source and/or ion beam source. The long throw magnetrons are used to deposit particles at low energy and low pressure, which can be useful when, for example, depositing interfacial layers or the like. An ion assist source can be added to increase the energy of the particles provided by the long throw magnetrons, and/or modify or clean the layers on the surface of the substrate. An ion beam source can also be added to deposit layers at a higher energies and lower pressures to, for example, provide layers with increased crystallinity. By using a long throw magnetron, an ion assist source and/or an ion beam source, magnetic films can be advantageously provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.