Crystallization method of amorphous silicon
US6500736B2 · kind B2 · utility
10Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2001 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Dec 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02672
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of crystallizing amorphous silicon using a metal catalyst. More specifically, the method includes forming an amorphous silicon layer over a substrate, forming a plurality of metal clusters on the amorphous silicon film, forming a heat insulating layer on the amorphous silicon layer including the metal clusters, disposing a pair of electrodes on the heat insulating layer, simultaneously applying a thermal treatment and a voltage to crystallize the amorphous silicon, and removing the heat insulating layer including the electrodes from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.