Semiconductor device and semiconductor device manufacturing method
US6500752B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 16, 2001 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Jul 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02216
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device manufacturing method of forming an inter-wiring layer insulating film having a low dielectric constant to cover a copper wiring. In construction, in a semiconductor device manufacturing method of forming an insulating film 34 having a low dielectric constant on a substrate 20, the insulating film 34 is formed by plasmanizing a film forming gas, that consists of at least any one of alkyl compound having siloxane bonds and methylsilane (SiHn(CH3)4−n: n=0, 1, 2, 3), any one oxygen-containing gas selected from a group consisting of N2O, H2O, and CO2, and ammonia (NH3) to react.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.