Semiconductor device which prevents leakage of noise generated in a circuit element forming area and which shields against external electromagnetic noise
US6501169B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2000 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Nov 8, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19104
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of a CSP structure is obtained by forming projection electrodes on a plurality of circuit element forming areas of a semiconductor wafer substrate, and then dividing the wafer into chips. Wiring patterns connected to connection pads for signal transmission are provided on the upper surface of an insulating film formed on the circuit element forming areas, and a conductive layer connected to a connection pad connected to a ground potential is provided on the resultant structure except for on the wiring patterns and on areas near the wiring patterns. Further, a thin film circuit element may be provided at the same layer as the conductive layer or below the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.