Accessing of two-terminal electronic quantum dot comprising static memory
US6501676B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2001 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Aug 2, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of storing and accessing data utiliaing two-terminal static memory cells made from semiconductor quantum dots. Each quantum dot is approximately 10 nm in dimension so as to comprise approximately 1000-10,000 atoms, and each memory cell has in a volume of approximately 6.4×107 cubic Angstroms, thereby corresponding to about 300,000 atoms. In use one of at least two possible stable states is set in the static memory cell by application of a D.C. voltage across the two terminals. The stable state is then monitored by application of A.C. voltage across the two terminals while monitoring the resulting A.C. current flow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.