Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium

US6503592B1 · kind B1 · utility

Assignee

• RICOH COMPANY, LTD. · JP

Inventors

• Katsuyuki Yamada · Mishima, JP
• Hiroko Iwasaki · Tokyo, JP
• Yukio Ide · Mishima, JP
• Makoto Harigaya · Hiratsuka, JP
• Yoshiyuki Kageyama · Tokushima, JP
• Hiroshi Deguchi · Yokohama, JP
• Masaetsu Takahashi · Yokohama, JP
• Yoshitaka Hayashi · Kariya, JP

Key dates

• Filing date: Feb 28, 2001
• Grant date: Jan 7, 2003
• Expiry date: Feb 28, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/21
• WIPO field: Audio-visual technology
• WIPO sector: Electrical engineering

Abstract

A sputtering target for fabricating a recording layer of a phase-change type optical recording medium contains a compound or mixture including as constituent. elements Ag, In, Te and Ob with the respective atomic percent (atom. %) of &agr;, &bgr;, &ggr; and &dgr; thereof being in the relationship of 2&lE;&agr;&lE;30, 3&lE;&bgr;&lE;30, 10&lE;&ggr;&lE;50, 15&lE;&dgr;&lE;83 and &agr;+&bgr;+&ggr;+&dgr;=100, and a method of producing the above sputtering target is provided. A phase-change type optical recording medium includes a recording layer containing as constituent elements Ag, In, To and Sb with the respective atomic percent of &agr;, &bgr;, &ggr; and &dgr; thereof being in the relationship of 0<&agr;&lE;30, 0<&bgr;&lE;30, 10&lE;&ggr;&lE;50, 10&lE;&dgr;&lE;80, and &agr;+&bgr;+&ggr;+&dgr;=100, and is capable of recording and erasing information by utilizing the phase changes of a recording material in the recording layer. A method of fabricating the above phase-change type optical recording medium is also provided.