Method for monolithic integration of multiple devices on an optoelectronic substrate
US6503768B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2001 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Mar 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a method for monolithic integration of multiple devices on an optoelectronic substrate. The method, in a preferred embodiment, includes forming an active layer having a given wavelength over a substrate. The method further includes forming an N-type doped layer over a portion of the active layer to form first and second active regions within the active layer, the first active region having the given wavelength and the second active region having an altered wavelength different from the given wavelength. In one exemplary embodiment, the conditions used to form the N-type doped layer, for example, dopant concentration, growth rate and temperature, cause the difference in wavelength between the given wavelength and the altered wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.