Patent · US Expired

Method for fabricating a patterned metal-oxide-containing layer

US6503792B2 · kind B2 · utility

8Cited by

5References

14Claims

0Family size

Assignee

Infincon Technologies AG · DE

Inventors

Walter Hartner · Munich, DE
Gunther Schindler · Hersbruck, DE
Volker Weinrich · Paris, FR
Mattias Ahlstedt · Delft, NL

Key dates

Filing date	Dec 28, 2000
Grant date	Jan 7, 2003
Priority date	—
Expiry date	Dec 28, 2020

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/692
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The damage to edge sections which occurs during the patterning of a metal-oxide-containing layer can be compensated by the deposition of an annealing layer and a subsequent heat treatment step through which a material flow takes place from the annealing layer into the damaged edge sections. The metal-oxide-containing layer can form the dielectric of a storage capacitor of a DRAM memory cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.