Thin film formation by inductively-coupled plasma CVD process
US6503816B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 12, 2001 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Apr 12, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film forming method and apparatus forms a thin film having an excellent thickness uniformity over a substrate, particularly a large-area substrate. The thin film forming method and apparatus includes a film forming chamber in which an inductive coupling electrode having a feeding portion and a grounding portion at its two ends is arranged, a high-frequency power source for feeding a high-frequency power to the feeding portion, and a waveform generator for amplitude-modulating the high-frequency power outputted from the high-frequency power source. The amplitude-modulated high-frequency power is fed to the inductive coupling electrode to generate a plasma so that a thin film may be formed on a substrate arranged to face the inductive coupling electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.