Semiconductor device and method for manufacturing the same
US6503826B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 16, 2000 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Mar 16, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an LDD structure MOSFET, a protecting multilayer insulating film is formed to cover a gate electrode in order to protect the gate electrode and the gate oxide film from a moisture included in an upper level layer. The protecting multilayer insulating film includes a protecting nitride film for preventing infiltration of moisture, and another protecting insulator film having a compressive stress for relaxing a tensile stress of the protecting nitride film. Thus, it is possible to prevent infiltration of moisture, and simultaneously, it is possible to minimize energy levels for trapping electrons and holes, which would have otherwise been formed within the gate oxide film and at a boundary between the gate oxide film and the semiconductor substrate because of the tensile stress of the protecting nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.