Indirect back surface contact to semiconductor devices

US6504178B2 · kind B2 · utility

Assignee

• Digirad Corporation · US

Inventors

• Lars Carlson · Del Mar, US
• Shulai Zhao · Encinitas, US
• Richard W. Wilson · Phoenix, US

Key dates

• Filing date: Apr 5, 2001
• Grant date: Jan 7, 2003
• Expiry date: Apr 5, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/802

Abstract

A semiconductor imaging device is disclosed. The device includes a substrate having at least first and second surfaces opposing each other, and a circuit layer. The substrate is doped to exhibit a first conductivity type. The substrate includes a conducting layer, a region, and a plurality of doped regions. The conducting layer includes a first type dopants incorporated near the first surface. The region includes a heavily doped area within the substrate near the second surface. The plurality of doped regions includes a second type dopants formed on the second surface. The circuit layer is formed over the second surface to provide gate contacts to and readout circuits for the plurality of doped regions. The readout circuit provides readout of optical signals from pixels.