Solid state imaging device, method of manufacturing the same, and solid state imaging system
US6504194B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 20, 2000 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Nov 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
There is provided a solid state imaging device using a MOS image sensor of a threshold voltage modulation system employed in a video camera, an electronic camera, an image input camera, a scanner, a facsimile, or the like. In configuration, in the solid state imaging device that comprises a photo diode formed in a second semiconductor layer 15a of opposite conductivity type in a first semiconductor layer 12 and 32 of one conductivity type, and a light signal detecting insulated gate field effect transistor formed in a fourth semiconductor layer 15b of opposite conductivity type in a third semiconductor layer 12 of one conductivity type adjacently to the photo diode, a carrier pocket 25 is provided in the fourth semiconductor layer 15b, and a portion of the first semiconductor layer 12, 32 under the second semiconductor layer 15a is thicker than a portion of the third semiconductor layer 12 under the fourth semiconductor layer 15b in a depth direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.