Device for quantitative detection of copper in silicon by transient ionic drift and method using same
US6504377B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 27, 2001 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Feb 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An analyzing device for producing measurements using transient ionic drift technique and an analysis method using same. The device for the quantitative detection of copper in silicon by transient ionic drift essentially comprises a heater and a rapid cooler for the sample to be analyzed, an electrode for measuring the electrical capacity of the sample and a unit generating an energizing signal and processing the measuring electric signal. The heater (2) for the sample (4) to be analyzed consists in at least a halogen lamp, the rapid cooler (3) for the sample (4) to be analyzed is a water cooler, and the electrode for measuring the sample (4) to be analyzed is a mercury electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.