Non-volatile semiconductor memory device improved sense amplification configuration
US6504761B2 · kind B2 · utility
15Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2001 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Aug 20, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In the non-volatile semiconductor memory device, for a current mirror for reading out data of a memory cell, a diode-connected transistor and a cut transistor are provided. The diode-connected transistor makes a precharged voltage level lower than a power supply voltage level. The cut transistor reduces current consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.