Method for the production of multi-crystalline semiconductor material

US6506250B1 · kind B1 · utility

Assignees

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US
• ACCESS E.V. · DE

Inventors

• Otwin Breitenstein · Schraplau, DE
• Dieter Franke · Munich, DE

Key dates

• Filing date: May 30, 2001
• Grant date: Jan 14, 2003
• Expiry date: May 30, 2021

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B11/007
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for producing a multi-crystalline semiconductor material by crystallization from a melt of a base material in which vibration energy in the sonic or ultrasonic range is acoustically coupled by a gaseous transmission medium into the solidifying or cooling material during solidification of the melt and/or during subsequent further cooling. The parameters of this vibration energy are harmonized with the parameters of the melt and the cooling time in such a manner that the dislocation energy in the cooled multi-crystalline material is considerably lower than where there is no vibration energy coupling during the cooling time.