Patent · US Expired

Photolithographic method for fabricating organic light-emitting diodes

US6506616B1 · kind B1 · utility

19Cited by
7References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 16, 2000
Grant dateJan 14, 2003
Priority date
Expiry dateNov 16, 2020

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K59/873

Abstract

A method of photolithographically patterning an organic semiconductor device, comprising the steps of protecting the organic layer of the device by depositing a metal layer thereon, depositing and patterning a photoresist layer on said metal layer, and selectively etching the exposed areas to pattern said metal layer and said organic layer. Specifically, the disclosed method provides the photolithographic fabrication of organic light emitting diodes (OLEDs) and organic lasers diodes (OLDs).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.