Patent · US Expired

Versatile, high-sensitivity faraday cup array for ion implanters

US6507033B1 · kind B1 · utility

3Cited by
11References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 29, 1999
Grant dateJan 14, 2003
Priority date
Expiry dateMar 29, 2019

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/31701
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An improved Faraday cup array for determining the dose of ions delivered to a substrate during ion implantation and for monitoring the uniformity of the dose delivered to the substrate. The improved Faraday cup array incorporates a variable size ion beam aperture by changing only an insertable plate that defines the aperture without changing the position of the Faraday cups which are positioned for the operation of the largest ion beam aperture. The design enables the dose sensitivity range, typically 1011-1018 ions/cm2 to be extended to below 106 ions/cm2. The insertable plate/aperture arrangement is structurally simple and enables scaling to aperture areas between <1 cm2 and >750 cm2, and enables ultra-high vacuum (UHV) applications by incorporation of UHV-compatible materials.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.