Semiconductor integrated circuit device
US6507051B1 · kind B1 · utility
16Cited by
0References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 16, 2000 |
| Grant date | Jan 14, 2003 |
| Priority date | — |
| Expiry date | Aug 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor layer structure, and gate, drain and source electrodes provided on the semiconductor layer structure, the gate electrode being located between the drain and source electrodes. A depletion modulating part is located between the gate electrode and the drain electrode and includes portions spaced apart from each other in a gate-width direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.