Semiconductor device
US6507529B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2001 |
| Grant date | Jan 14, 2003 |
| Priority date | — |
| Expiry date | Dec 6, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/406
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device capable of refreshing a plurality of memory cells. In operation, when requesting a data read operation a /row selection control signal is input to a set/reset circuit of a row selection control circuit, whereby an H-level hidden refresh control signal is output and an internal row selection control signal transitions to the H level. As a result, an intended word line is selected, and a refresh operation is initiated. Then, a sense amplifier activation completion signal SEND is input via a delay circuit to the set/reset circuit after completion of a sense operation, and the internal row selection control signal transitions to the L level. The sense amplifier activation completion signal SEND is input to another set/reset circuit after passing through three delay circuits, and an RW row selection control signal transitions to the H level, thereby performing a data read operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.