Telluride quaternary nonlinear optic materials
US6508960B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 1999 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Jul 26, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A solid state laser device made from a nonlinear optic quaternary alloy of Silver, Gallium, Selenium and Tellurium semiconductor material or Silver, Gallium, Sulfur and Tellurium semiconductor material. The Tellurium component in each alloy provides quaternary alloying anion modification of an underlying ternary semiconductor crystal and achieves tuning of the birefringence and tuning of the wavelength passband of the semiconductor material. The tuned quaternary alloy enables beam walkoff-free noncritical phase match operation of the laser device including use of a phase match angle supporting optimum use of the material's nonlinear properties, maximized useful length of the material crystal, room temperature wavelength changing operation, significantly increased second order nonlinear susceptibility, a factor of ten reduction in the walk-off angle and photon energy conversion efficiencies several times those usually achieved. The Tellurium alloy component also accomplishes shifting of the semiconductor material energy absorption characteristic to avoid a preferred laser pump wavelength energy absorption peak and assists in circumvention of the thermal lensing phenomenon in the cry…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.