Structure and fabrication process for an improved polymer light emitting diode
US6509581B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2000 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Mar 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K50/171
Abstract
The present invention discloses an organic light-emitting diode (LED). The organic light emitting diode is supported on an indium/tin oxide 110 (ITO) coated glass substrate 105. The organic light-emitting diode includes an amorphous-silicon (&agr;-Si) resistive layer 115 covering the ITO 110 coated glass substrate 105. The organic light-emitting diode 100 further includes a polyaniline (PANI) layer 120 covering the amorphous silicon (&agr;-Si) resistive layer 115 and an organic light emitting layer 125 overlying the PANI layer 120. And, the organic light-emitting diode 100 further has a conductive electrode layer 130 covering the light emitting layer 125. In a preferred embodiment, the amorphous silicon (&agr;-Si) resistive layer 115 functioning as a current limiting layer for limiting a current density conducted between the ITO 110 coated glass substrate 105 and the conductive electrode layer 130 under a maximum allowable current density of 1000 mA/cm2. In another preferred embodiment, the amorphous silicon (&agr;-Si) resistive layer 115 functioning as a current distribution layer for distributing a current conducted between the ITO coated glass substrate and the conductive electr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.