Magnetic random access memory capable of writing information with reduced electric current
US6509621B2 · kind B2 · utility
50Cited by
4References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 28, 2000 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Dec 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A magnetic random access memory includes a ferromagnetic pinned layer having a spin polarization of 0.9 or more in a TMR sensor constituting a memory cell. Further, the construction for reducing a write current by applying an offset magnetic field to the memory cell, is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.