Configuration for coating a substrate by means of a sputtering device

US6511584B1 · kind B1 · utility

Assignee

• Unaxis Deutschland GmbH · DE

Inventors

• Joachim Szczyrbowski · Goldbach, DE
• Gotz Teschner · Hanau, DE
• Anton Zmelty · Hösbach, DE
• Jurgen Bruch · Hammersbach, DE
• Dietmar Marquardt · Niederrodenbach, DE

Key dates

• Filing date: Mar 7, 1997
• Grant date: Jan 28, 2003
• Expiry date: Mar 7, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J37/3402
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A sputtering electrode is switched between two power values at a constant reactive gas flow rate which is selected so that the target of the sputtering electrode is in the metallic mode at the first power value while in the oxide mode at a second power value.