Thin film transistors with self-aligned transparent pixel electrode
US6511869B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2000 |
| Grant date | Jan 28, 2003 |
| Priority date | — |
| Expiry date | Dec 5, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.