Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
US6512247B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2001 |
| Grant date | Jan 28, 2003 |
| Priority date | — |
| Expiry date | Aug 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A display device includes a pixel region having a plurality of pixels and a peripheral circuit region disposed at a periphery of the pixel region for driving the pixels. The peripheral circuit region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a first kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the first kind is at least 3 &mgr;m. The pixel region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a second kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the second kind is at least 0.05 &mgr;m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.