Semiconductor integrated circuit device having reference voltage generating section
US6512398B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | May 17, 2000 |
| Grant date | Jan 28, 2003 |
| Priority date | — |
| Expiry date | May 17, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The reliability of a semiconductor integrated circuit device is remarkably improved by minimizing the fluctuations of the detection level of the supply voltage due to the manufacturing process and/or other factors. In the semiconductor integrated circuit device according to the invention, a differential amplifier circuit SA amplifies the differential voltage representing the difference between the reference voltage VREF generated by a reference voltage generating section 16 and the detection voltage obtained by dividing a supply voltage VCC by means of resistors 27 and 28 and outputs it as a detection signal K. The reference voltage generating section 16 generates reference voltage VREF from the base-emitter voltage of a bipolar transistor that is minimally affected by temperature and the manufacturing process so that the fluctuations of the detection level of the supply voltage VCC can be minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.