Storage pixel sensor and array with compression
US6512544B1 · kind B1 · utility
136Cited by
53References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 1998 |
| Grant date | Jan 28, 2003 |
| Priority date | — |
| Expiry date | Jun 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/76
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A storage pixel sensor disposed on a semiconductor substrate comprises a photosensor. At least one nonlinear capacitive element is coupled to the photosensor. At least one nonlinear capacitive element is arranged to have a compressive photocharge-to-voltage gain function. An amplifier has an input coupled to the nonlinear capacitor and an output. Other, non-capacitive elements may be employed to produce a compressive photo-charge-to-voltage gain having at least one breakpoint.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.