Method of removing contaminants from integrated circuit substrates using cleaning solutions
US6513538B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2001 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | May 22, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for removing contaminants from an integrated circuit substrate include treating the substrate with a hydrogen peroxide cleaning solution containing a chelating agent, and treating the substrate with hydrogen gas and fluorine-containing gas, and annealing the substrate. Cleaning solutions includes ammonium, hydrogen peroxide, deionized water, and chelating agent. The chelating agent includes one to three compounds selected from the group consisting of carboxylic acid compounds, phosphonic acid compounds, and hydroxyl aromatic compounds. The fluorine-containing gas is a gas selected from the group consisting of nitrogen trifluoride (NF3), hexafluorosulphur (SF6), and trifluorochlorine (ClF3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.