Semiconductor device manufacturing method having a porous insulating film
US6514855B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 12, 2000 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | Apr 12, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device manufacturing method for forming a via hole or a contact hole in an interlayer insulating film with a low dielectric constant. The method includes the steps of forming a nitrogen containing insulating film on a substrate, forming a porous insulating film on the nitrogen-containing insulating film, forming an opening in the underlying insulating film and the porous insulating film, and forming a nitrogen containing insulating film on the surface of the porous insulating film and on the surface of the opening by bringing these surfaces into contact with a plasma of any one of an ammonia gas, a nitrogen gas, and an oxygen nitride gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.