Method for reforming base surface, method for manufacturing semiconductor device and equipment for manufacturing the same
US6514884B2 · kind B2 · utility
149Cited by
11References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 13, 1998 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | May 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for reforming a surface of a base layer before thin film deposition, wherein a base thermal SiO2 film is exposed to a gas selected from the group consisting of AX4, AHnCl4−n and ARnX4−n, wherein A represents Si, Ge or Sn, X represents I, Br, F or Cl and R represents CmH2m+1, wherein “n” is 1, 2 or 3 and “m” is a natural number.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.