Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
US6515308B1 · kind B1 · utility
137Cited by
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6Claims
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Key dates
| Filing date | Dec 21, 2001 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | Dec 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/862
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an nitride based vertical cavity surface emitting laser or light emitting diode structure. The p-n tunnel junction reduces the number of p-type semiconductor layers in the nitride based semiconductor VCSEL or LED structure which reduces the distributed loss, reduces the threshold current densities, reduces the overall series resistance and improves the structural quality of the laser by allowing higher growth temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.