Method of making surface acoustic wave device
US6516503B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2000 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | May 19, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49156
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of making surface acoustic wave device includes a piezoelectric substrate, a first surface acoustic wave element having at least one interdigital transducer on the piezoelectric substrate, a second surface acoustic wave element having at least one interdigital transducer which is provided on the piezoelectric substrate. The at least one interdigital transducer of the second surface acoustic wave element has a thickness that is different from the interdigital transducer of the first surface acoustic wave element, and the second surface acoustic wave element has a frequency characteristic that is different from that of the first surface acoustic wave element. An insulating film is applied to the first and second surface acoustic wave elements. A thickness of the insulating film at a region on the first surface acoustic wave element is different from the thickness of a region on the second surface acoustic wave.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.