Method for making a test wafer from a substrate
US6517908B1 · kind B1 · utility
9Cited by
7References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 10, 2000 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Jan 10, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C4/123
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a test wafer and a process for making the same that includes a plurality of peaks on a surface thereof that have a cross-section sufficient to reduce the stress of a refractory metal layer deposited thereon. The present invention is based upon the discovery that by fracturing a refractory metal layer on a test wafer reduces the stress to which the test wafer is subjected. The test includes a substrate having a surface with a plurality of peaks and troughs formed therein defining a roughness. Typically, the roughness Ra is in the range of 500 to 1200 micrometers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.