Process for the formation of silicon oxide films
US6517911B1 · kind B1 · utility
31Cited by
1References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 30, 2000 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Nov 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a process for forming a silicon oxide film which is useful as an electrical insulating film, dielectric film or protective film as used in LSI, thin-film transistor, photoelectric converter, photosensitive body and the like. The process comprises forming a coating film from a polysilane compound represented by the formula SinRm (wherein n is an integer of 3 or more, m is an integer of n to 2n+2, and a plurality of R's are independently a hydrogen atom or an alkyl group) and oxidizing the coating film to form the silicon oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.