Method for making optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys

US6518077B2 · kind B2 · utility

Assignee

• North Carolina State University · US

Inventors

• Jagdish Narayan · Raleigh, US
• Ajay Sharma · Beaverton, US
• John Muth · Raleigh, US

Key dates

• Filing date: Jan 15, 2002
• Grant date: Feb 11, 2003
• Expiry date: Jan 15, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/543

Abstract

An electronic device has an alloy layer containing magnesium oxide and at least one of zinc oxide and cadmium oxide and having a cubic structure on a substrate. The alloy layer may be directly on the substrate or, alternatively, one or more buffer layers may be between the alloy layer and the substrate. The alloy layer may be domain-matched epitaxially grown directly on the substrate, or may be lattice-matched epitaxially grown directly on the buffer layer. The cubic layer may also be used to form single and multiple quantum wells. Accordingly, electronic devices having wider bandgap, increased binding energy of excitons, and/or reduced density of growth and/or misfit dislocations in the active layers as compared with conventional III-nitride electronic devices may be provided.