Processing approach towards the formation of thin-film Cu(In,Ga)Se2
US6518086B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2001 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Dec 18, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/93
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420° C.-550° C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-III-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S)2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.