Nitride compound semiconductor light emitting device and method for producing the same
US6518602B1 · kind B1 · utility
36Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | Sep 1, 2000 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Sep 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride compound semiconductor light emitting device of the present invention includes: a nitride compound semiconductor substrate; and a light emitting device section including a nitride compound semiconductor provided on the nitride compound semiconductor substrate. The nitride compound semiconductor substrate contains a group VII element as an impurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.