Semiconductor integrated circuit device
US6518825B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2001 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | May 24, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/146
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a semiconductor integrated circuit device comprising a CMOS circuit, the CMOS circuit operating at a high speed, consuming a small amount of power, is achieved. In particular, acceleration of the operating speed under low voltage is achieved. The semiconductor integrated circuit device of the invention comprises a main circuit including a CMOS circuit, a changeover circuit, a substrate bias control circuit and a switching circuit and, in accordance with a changing signal from the changeover circuit, switches states of a substrate of a MOS transistor of the main circuit between a state in which normal supply voltage as well as ground voltage are applied and a state in which forward bias is applied. The changeover circuit detects a drop in supply voltage, etc. and outputs changing signals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.